Transformational III-V Electronics

Handle URI:
http://hdl.handle.net/10754/316751
Title:
Transformational III-V Electronics
Authors:
Nour, Maha A.
Abstract:
Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.
Advisors:
Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Committee Member:
Alouini, Mohamed-Slim ( 0000-0003-4827-1793 ) ; Lai, Zhiping ( 0000-0001-9555-6009 )
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Program:
Electrical Engineering
Issue Date:
Apr-2014
Type:
Thesis
Appears in Collections:
Theses; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.advisorHussain, Muhammad Mustafaen
dc.contributor.authorNour, Maha A.en
dc.date.accessioned2014-05-13T07:33:30Z-
dc.date.available2014-05-13T07:33:30Z-
dc.date.issued2014-04en
dc.identifier.urihttp://hdl.handle.net/10754/316751en
dc.description.abstractFlexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.en
dc.language.isoenen
dc.subjectIII-Vsen
dc.subjectFlexibleen
dc.subjectElectronicsen
dc.subjectEtchingen
dc.subjectTransformation Processen
dc.subjectHigh Performance Devicesen
dc.titleTransformational III-V Electronicsen
dc.typeThesisen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberAlouini, Mohamed-Slimen
dc.contributor.committeememberLai, Zhipingen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.nameMaster of Scienceen
dc.person.id123772en
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