Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes

Handle URI:
http://hdl.handle.net/10754/316028
Title:
Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes
Authors:
Janjua, Bilal ( 0000-0001-9974-9879 ) ; Alyamani, Ahmed Y.; El-Desouki, M. M.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We study the enhanced hole confinement by having a large bandgap AlGaN monolayer insertion (MLI) between the quantum well (QW) and the quantum barrier (QB). The numerical analysis examines the energy band alignment diagrams, using a self-consistent 6 × 6 k ·p method and, considering carrier distribution, recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates), under equilibrium and forward bias conditions. The active region is based on AlaGa1-aN (barrier)/AlbGa1-bN (MLI)/AlcGa1-cN (well)/AldGa1-dN (barrier), where b > d > a > c. A large bandgap AlbGa1-bN mono layer, inserted between the QW and QB, was found to be effective in providing stronger hole confinement. With the proposed band engineering scheme, an increase of more than 30% in spatial overlap of carrier wavefunction was obtained, with a considerable increase in carrier density and direct radiative recombination rates. The single-QW-based UV-LED was designed to emit at 280 nm, which is an effective wavelength for water disinfection.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Janjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS (2014) Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes. IEEE Photonics Journal 6: 1-9. doi:10.1109/JPHOT.2014.2310199.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Photonics Journal
Issue Date:
Apr-2014
DOI:
10.1109/JPHOT.2014.2310199
Type:
Article
ISSN:
1943-0655
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6758387
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorEl-Desouki, M. M.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-04-19T18:04:06Z-
dc.date.available2014-04-19T18:04:06Z-
dc.date.issued2014-04en
dc.identifier.citationJanjua B, Ng TK, Alyamani AY, El-Desouki MM, Ooi BS (2014) Enhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodes. IEEE Photonics Journal 6: 1-9. doi:10.1109/JPHOT.2014.2310199.en
dc.identifier.issn1943-0655en
dc.identifier.doi10.1109/JPHOT.2014.2310199en
dc.identifier.urihttp://hdl.handle.net/10754/316028en
dc.description.abstractWe study the enhanced hole confinement by having a large bandgap AlGaN monolayer insertion (MLI) between the quantum well (QW) and the quantum barrier (QB). The numerical analysis examines the energy band alignment diagrams, using a self-consistent 6 × 6 k ·p method and, considering carrier distribution, recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates), under equilibrium and forward bias conditions. The active region is based on AlaGa1-aN (barrier)/AlbGa1-bN (MLI)/AlcGa1-cN (well)/AldGa1-dN (barrier), where b > d > a > c. A large bandgap AlbGa1-bN mono layer, inserted between the QW and QB, was found to be effective in providing stronger hole confinement. With the proposed band engineering scheme, an increase of more than 30% in spatial overlap of carrier wavefunction was obtained, with a considerable increase in carrier density and direct radiative recombination rates. The single-QW-based UV-LED was designed to emit at 280 nm, which is an effective wavelength for water disinfection.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6758387en
dc.rightsArchived with thanks to IEEE Photonics Journalen
dc.titleEnhancement of Hole Confinement by Monolayer Insertion in Asymmetric Quantum-Barrier UVB Light Emitting Diodesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Photonics Journalen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKing Abdulaziz City for Science and Technologyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
kaust.authorJanjua, Bilalen
kaust.authorNg, Tien Kheeen
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