Hole doped Dirac states in silicene by biaxial tensile strain

Handle URI:
http://hdl.handle.net/10754/315802
Title:
Hole doped Dirac states in silicene by biaxial tensile strain
Authors:
Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si–Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Kaloni TP, Cheng YC, Schwingenschlögl U (2013) Hole doped Dirac states in silicene by biaxial tensile strain. Journal of Applied Physics 113: 104305. doi:10.1063/1.4794812.
Publisher:
American Institute of Physics
Journal:
Journal of Applied Physics
Issue Date:
11-Mar-2013
DOI:
10.1063/1.4794812
ARXIV:
arXiv:1310.7411
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/113/10/10.1063/1.4794812; http://arxiv.org/abs/1310.7411
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorKaloni, Thaneshwor P.en
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T14:36:37Z-
dc.date.available2014-04-13T14:36:37Z-
dc.date.issued2013-03-11en
dc.identifier.citationKaloni TP, Cheng YC, Schwingenschlögl U (2013) Hole doped Dirac states in silicene by biaxial tensile strain. Journal of Applied Physics 113: 104305. doi:10.1063/1.4794812.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4794812en
dc.identifier.urihttp://hdl.handle.net/10754/315802en
dc.description.abstractThe effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si–Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/113/10/10.1063/1.4794812en
dc.relation.urlhttp://arxiv.org/abs/1310.7411en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleHole doped Dirac states in silicene by biaxial tensile strainen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Materials Engineering, Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
dc.identifier.arxividarXiv:1310.7411en
kaust.authorKaloni, Thaneshwor P.en
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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