Electronic transport through EuO spin-filter tunnel junctions

Handle URI:
http://hdl.handle.net/10754/315788
Title:
Electronic transport through EuO spin-filter tunnel junctions
Authors:
Jutong, Nuttachai; Eckern, Ulrich; Rungger, Ivan; Sanvito, Stefano; Schuster, Cosima; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Jutong N, Rungger I, Schuster C, Eckern U, Sanvito S, et al. (2012) Electronic transport through EuO spin-filter tunnel junctions. Phys Rev B 86. doi:10.1103/PhysRevB.86.205310.
Publisher:
American Physical Society
Journal:
Physical Review B
Issue Date:
12-Nov-2012
DOI:
10.1103/PhysRevB.86.205310
ARXIV:
arXiv:1207.2061
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.86.205310; http://arxiv.org/abs/1207.2061
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorJutong, Nuttachaien
dc.contributor.authorEckern, Ulrichen
dc.contributor.authorRungger, Ivanen
dc.contributor.authorSanvito, Stefanoen
dc.contributor.authorSchuster, Cosimaen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T13:12:37Z-
dc.date.available2014-04-13T13:12:37Z-
dc.date.issued2012-11-12en
dc.identifier.citationJutong N, Rungger I, Schuster C, Eckern U, Sanvito S, et al. (2012) Electronic transport through EuO spin-filter tunnel junctions. Phys Rev B 86. doi:10.1103/PhysRevB.86.205310.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.86.205310en
dc.identifier.urihttp://hdl.handle.net/10754/315788en
dc.description.abstractEpitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.86.205310en
dc.relation.urlhttp://arxiv.org/abs/1207.2061en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleElectronic transport through EuO spin-filter tunnel junctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitut für Physik, Universität Augsburg, 86135 Augsburg, Germanyen
dc.contributor.institutionSchool of Physics and CRANN, Trinity College, Dublin 2, Irelanden
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
dc.identifier.arxividarXiv:1207.2061en
kaust.authorSchwingenschlögl, Udoen
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