Quantum magnetotransport properties of topological insulators under strain

Handle URI:
http://hdl.handle.net/10754/315787
Title:
Quantum magnetotransport properties of topological insulators under strain
Authors:
Tahir, M.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We present a detailed theoretical investigation of the quantum magnetotransport properties of topological insulators under strain. We consider an external magnetic field perpendicular to the surface of the topological insulator in the presence of strain induced by the substrate. The strain effects mix the lower and upper surface states of neighboring Landau levels into two unequally spaced energy branches. Analytical expressions are derived for the collisional conductivity for elastic impurity scattering in the first Born approximation. We also calculate the Hall conductivity using the Kubo formalism. Evidence for the beating of Shubnikov–de Haas oscillations is found from the temperature and magnetic field dependence of the collisional and Hall conductivities. In the regime of a strong magnetic field, the beating pattern is replaced by a splitting of the magnetoresistance peaks due to finite strain energy. These results are in excellent agreement with recent HgTe transport experiments.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Tahir M, Schwingenschlögl U (2012) Quantum magnetotransport properties of topological insulators under strain. Phys Rev B 86. doi:10.1103/PhysRevB.86.075310.
Publisher:
American Physical Society
Journal:
Physical Review B
Issue Date:
15-Aug-2012
DOI:
10.1103/PhysRevB.86.075310
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.86.075310
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorTahir, M.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T13:12:15Z-
dc.date.available2014-04-13T13:12:15Z-
dc.date.issued2012-08-15en
dc.identifier.citationTahir M, Schwingenschlögl U (2012) Quantum magnetotransport properties of topological insulators under strain. Phys Rev B 86. doi:10.1103/PhysRevB.86.075310.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.86.075310en
dc.identifier.urihttp://hdl.handle.net/10754/315787en
dc.description.abstractWe present a detailed theoretical investigation of the quantum magnetotransport properties of topological insulators under strain. We consider an external magnetic field perpendicular to the surface of the topological insulator in the presence of strain induced by the substrate. The strain effects mix the lower and upper surface states of neighboring Landau levels into two unequally spaced energy branches. Analytical expressions are derived for the collisional conductivity for elastic impurity scattering in the first Born approximation. We also calculate the Hall conductivity using the Kubo formalism. Evidence for the beating of Shubnikov–de Haas oscillations is found from the temperature and magnetic field dependence of the collisional and Hall conductivities. In the regime of a strong magnetic field, the beating pattern is replaced by a splitting of the magnetoresistance peaks due to finite strain energy. These results are in excellent agreement with recent HgTe transport experiments.en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.86.075310en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleQuantum magnetotransport properties of topological insulators under strainen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionMaterials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorTahir, Muhammaden
kaust.authorSchwingenschlögl, Udoen
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