Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

Handle URI:
http://hdl.handle.net/10754/315784
Title:
Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation
Authors:
Kaloni, Thaneshwor P.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Kaloni TP, Schwingenschlögl U (2013) Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation. Journal of Applied Physics 114: 184307. doi:10.1063/1.4830016.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
13-Nov-2013
DOI:
10.1063/1.4830016
ARXIV:
arXiv:1310.7688
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4830016; http://arxiv.org/abs/1310.7688
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorKaloni, Thaneshwor P.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T14:38:32Z-
dc.date.available2014-04-13T14:38:32Z-
dc.date.issued2013-11-13en
dc.identifier.citationKaloni TP, Schwingenschlögl U (2013) Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation. Journal of Applied Physics 114: 184307. doi:10.1063/1.4830016.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4830016en
dc.identifier.urihttp://hdl.handle.net/10754/315784en
dc.description.abstractEpitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4830016en
dc.relation.urlhttp://arxiv.org/abs/1310.7688en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleWeak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliationen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Materials Engineering, Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
dc.identifier.arxividarXiv:1310.7688en
kaust.authorKaloni, Thaneshwor P.en
kaust.authorSchwingenschlögl, Udoen
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