Thermoelectric performance of electron and hole doped PtSb2

Handle URI:
http://hdl.handle.net/10754/315782
Title:
Thermoelectric performance of electron and hole doped PtSb2
Authors:
Saeed, Yasir ( 0000-0003-3080-7385 ) ; Singh, Nirpendra ( 0000-0001-8043-0403 ) ; Parker, D.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Saeed Y, Singh N, Parker D, Schwingenschlögl U (2013) Thermoelectric performance of electron and hole doped PtSb2. Journal of Applied Physics 113: 163706. doi:10.1063/1.4803145.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
30-Apr-2013
DOI:
10.1063/1.4803145
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/113/16/10.1063/1.4803145
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorSaeed, Yasiren
dc.contributor.authorSingh, Nirpendraen
dc.contributor.authorParker, D.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T14:37:29Z-
dc.date.available2014-04-13T14:37:29Z-
dc.date.issued2013-04-30en
dc.identifier.citationSaeed Y, Singh N, Parker D, Schwingenschlögl U (2013) Thermoelectric performance of electron and hole doped PtSb2. Journal of Applied Physics 113: 163706. doi:10.1063/1.4803145.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4803145en
dc.identifier.urihttp://hdl.handle.net/10754/315782en
dc.description.abstractWe investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/113/16/10.1063/1.4803145en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleThermoelectric performance of electron and hole doped PtSb2en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSaeed, Yasiren
kaust.authorSingh, Nirpendraen
kaust.authorSchwingenschlögl, Udoen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.