Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

Handle URI:
http://hdl.handle.net/10754/315778
Title:
Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control
Authors:
Gan, Liyong; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Zhang, Qingyun
Abstract:
We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Gan L-Y, Zhang Q, Cheng Y, Schwingenschlögl U (2013) Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control. Phys Rev B 88. doi:10.1103/PhysRevB.88.235310.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
26-Sep-2013
DOI:
10.1103/PhysRevB.88.235310
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.88.235310
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorGan, Liyongen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorZhang, Qingyunen
dc.date.accessioned2014-04-13T14:30:20Z-
dc.date.available2014-04-13T14:30:20Z-
dc.date.issued2013-09-26en
dc.identifier.citationGan L-Y, Zhang Q, Cheng Y, Schwingenschlögl U (2013) Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control. Phys Rev B 88. doi:10.1103/PhysRevB.88.235310.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.88.235310en
dc.identifier.urihttp://hdl.handle.net/10754/315778en
dc.description.abstractWe study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.en
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.88.235310en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleTwo-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection controlen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Physics and CRANN, Trinity College, Dublin 2, Irelanden
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorGan, Liyongen
kaust.authorZhang, Qingyunen
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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