Effect of the number of stacking layers on the characteristics of quantum-dash lasers

Handle URI:
http://hdl.handle.net/10754/315761
Title:
Effect of the number of stacking layers on the characteristics of quantum-dash lasers
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Bhattacharya, Pallab K.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Khan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS (2011) Effect of the number of stacking layers on the characteristics of quantum-dash lasers. Optics Express 19: 13378. doi:10.1364/OE.19.013378.
Publisher:
Optical Society of America
Journal:
Optics Express
Issue Date:
27-Jun-2011
DOI:
10.1364/OE.19.013378
Type:
Article
ISSN:
1094-4087
Additional Links:
http://www.opticsinfobase.org/abstract.cfm?URI=oe-19-14-13378
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T13:04:58Z-
dc.date.available2014-04-13T13:04:58Z-
dc.date.issued2011-06-27en
dc.identifier.citationKhan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS (2011) Effect of the number of stacking layers on the characteristics of quantum-dash lasers. Optics Express 19: 13378. doi:10.1364/OE.19.013378.en
dc.identifier.issn1094-4087en
dc.identifier.doi10.1364/OE.19.013378en
dc.identifier.urihttp://hdl.handle.net/10754/315761en
dc.description.abstractA theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.en
dc.language.isoenen
dc.publisherOptical Society of Americaen
dc.relation.urlhttp://www.opticsinfobase.org/abstract.cfm?URI=oe-19-14-13378en
dc.rightsArchived with thanks to Optics Expressen
dc.titleEffect of the number of stacking layers on the characteristics of quantum-dash lasersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalOptics Expressen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301, Beal Avenue, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorSchwingenschlögl, Udoen
kaust.authorOoi, Boon S.en
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