Antisites and anisotropic diffusion in GaAs and GaSb

Handle URI:
http://hdl.handle.net/10754/315753
Title:
Antisites and anisotropic diffusion in GaAs and GaSb
Authors:
Tahini, H. A.; Bracht, H.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Tahini HA, Chroneos A, Bracht H, Murphy ST, Grimes RW, et al. (2013) Antisites and anisotropic diffusion in GaAs and GaSb. Appl Phys Lett 103: 142107. doi:10.1063/1.4824126.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
2-Oct-2013
DOI:
10.1063/1.4824126
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/103/14/10.1063/1.4824126
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorTahini, H. A.en
dc.contributor.authorBracht, H.en
dc.contributor.authorChroneos, Alexanderen
dc.contributor.authorGrimes, R. W.en
dc.contributor.authorMurphy, S. T.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T12:27:33Z-
dc.date.available2014-04-13T12:27:33Z-
dc.date.issued2013-10-02en
dc.identifier.citationTahini HA, Chroneos A, Bracht H, Murphy ST, Grimes RW, et al. (2013) Antisites and anisotropic diffusion in GaAs and GaSb. Appl Phys Lett 103: 142107. doi:10.1063/1.4824126.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4824126en
dc.identifier.urihttp://hdl.handle.net/10754/315753en
dc.description.abstractThe significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/14/10.1063/1.4824126en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleAntisites and anisotropic diffusion in GaAs and GaSben
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionEngineering and Innovation, Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.institutionInstitute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSchwingenschlögl, Udoen
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