Giant valley drifts in uniaxially strained monolayer MoS2

Handle URI:
http://hdl.handle.net/10754/315746
Title:
Giant valley drifts in uniaxially strained monolayer MoS2
Authors:
Zhang, Qingyun; Cheng, Yingchun; Gan, Liyong; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Using first-principles calculations, we study the electronic structure of monolayer MoS2 under uniaxial strain. We show that the energy valleys drift far off the corners of the Brillouin zone (K points), about 12 times the amount observed in graphene. Therefore, it is essential to take this effect into consideration for a correct identification of the band gap. The system remains a direct band gap semiconductor up to 4% uniaxial strain, while the size of the band gap decreases from 1.73 to 1.54 eV. We also demonstrate that the splitting of the valence bands due to inversion symmetry breaking and spin-orbit coupling is not sensitive to strain.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Zhang Q, Cheng Y, Gan L-Y, Schwingenschlögl U (2013) Giant valley drifts in uniaxially strained monolayer MoS2. Phys Rev B 88. doi:10.1103/PhysRevB.88.245447.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
30-Dec-2013
DOI:
10.1103/PhysRevB.88.245447
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.88.245447
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Qingyunen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorGan, Liyongen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T09:34:43Z-
dc.date.available2014-04-13T09:34:43Z-
dc.date.issued2013-12-30en
dc.identifier.citationZhang Q, Cheng Y, Gan L-Y, Schwingenschlögl U (2013) Giant valley drifts in uniaxially strained monolayer MoS2. Phys Rev B 88. doi:10.1103/PhysRevB.88.245447.en
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.88.245447en
dc.identifier.urihttp://hdl.handle.net/10754/315746en
dc.description.abstractUsing first-principles calculations, we study the electronic structure of monolayer MoS2 under uniaxial strain. We show that the energy valleys drift far off the corners of the Brillouin zone (K points), about 12 times the amount observed in graphene. Therefore, it is essential to take this effect into consideration for a correct identification of the band gap. The system remains a direct band gap semiconductor up to 4% uniaxial strain, while the size of the band gap decreases from 1.73 to 1.54 eV. We also demonstrate that the splitting of the valence bands due to inversion symmetry breaking and spin-orbit coupling is not sensitive to strain.en
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.88.245447en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleGiant valley drifts in uniaxially strained monolayer MoS2en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionMaterials Engineering, Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhang, Qingyunen
kaust.authorCheng, Yingchunen
kaust.authorGan, Liyongen
kaust.authorSchwingenschlögl, Udoen
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