Electronic structure of superlattices of graphene and hexagonal boron nitride

Handle URI:
http://hdl.handle.net/10754/315745
Title:
Electronic structure of superlattices of graphene and hexagonal boron nitride
Authors:
Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Kaloni TP, Cheng YC, Schwingenschlögl U (2011) Electronic structure of superlattices of graphene and hexagonal boron nitride. J Mater Chem 22: 919. doi:10.1039/c1jm14895h.
Publisher:
Royal Society of Chemistry
Journal:
Journal of Materials Chemistry
Issue Date:
14-Nov-2011
DOI:
10.1039/c1jm14895h
Type:
Article
ISSN:
0959-9428; 1364-5501
Additional Links:
http://xlink.rsc.org/?DOI=c1jm14895h
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorKaloni, Thaneshwor P.en
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T12:42:21Z-
dc.date.available2014-04-13T12:42:21Z-
dc.date.issued2011-11-14en
dc.identifier.citationKaloni TP, Cheng YC, Schwingenschlögl U (2011) Electronic structure of superlattices of graphene and hexagonal boron nitride. J Mater Chem 22: 919. doi:10.1039/c1jm14895h.en
dc.identifier.issn0959-9428en
dc.identifier.issn1364-5501en
dc.identifier.doi10.1039/c1jm14895hen
dc.identifier.urihttp://hdl.handle.net/10754/315745en
dc.description.abstractWe study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.relation.urlhttp://xlink.rsc.org/?DOI=c1jm14895hen
dc.rightsArchived with thanks to Journal of Materials Chemistryen
dc.titleElectronic structure of superlattices of graphene and hexagonal boron nitrideen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Materials Chemistryen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionEngineering and Innovation, Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.institutionInstitute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKaloni, Thaneshwor P.en
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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