E centers in ternary Si1−x−yGexSny random alloys

Handle URI:
http://hdl.handle.net/10754/315740
Title:
E centers in ternary Si1−x−yGexSny random alloys
Authors:
Chroneos, Alexander; Bracht, H.; Grimes, R. W.; Jiang, C.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1−x−yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Chroneos A, Jiang C, Grimes RW, Schwingenschlögl U, Bracht H (2009) E centers in ternary Si[sub 1-x-y]Ge[sub x]Sn[sub y] random alloys. Appl Phys Lett 95: 112101. doi:10.1063/1.3224894.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
14-Sep-2009
DOI:
10.1063/1.3224894
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/95/11/10.1063/1.3224894
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorChroneos, Alexanderen
dc.contributor.authorBracht, H.en
dc.contributor.authorGrimes, R. W.en
dc.contributor.authorJiang, C.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T12:18:06Z-
dc.date.available2014-04-13T12:18:06Z-
dc.date.issued2009-09-14en
dc.identifier.citationChroneos A, Jiang C, Grimes RW, Schwingenschlögl U, Bracht H (2009) E centers in ternary Si[sub 1-x-y]Ge[sub x]Sn[sub y] random alloys. Appl Phys Lett 95: 112101. doi:10.1063/1.3224894.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3224894en
dc.identifier.urihttp://hdl.handle.net/10754/315740en
dc.description.abstractDensity functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1−x−yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/95/11/10.1063/1.3224894en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleE centers in ternary Si1−x−yGexSny random alloysen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionMaterials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United Statesen
dc.contributor.institutionInstitute of Material Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSchwingenschlögl, Udoen
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