Defect interactions in Sn1−xGex random alloys

Handle URI:
http://hdl.handle.net/10754/315739
Title:
Defect interactions in Sn1−xGex random alloys
Authors:
Chroneos, Alexander; Bracht, H.; Grimes, R. W.; Jiang, C.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Sn1−xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1−xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Chroneos A, Jiang C, Grimes RW, Schwingenschlögl U, Bracht H (2009) Defect interactions in Sn[sub 1-x]Ge[sub x] random alloys. Appl Phys Lett 94: 252104. doi:10.1063/1.3159468.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
23-Jun-2009
DOI:
10.1063/1.3159468
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/94/25/10.1063/1.3159468
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorChroneos, Alexanderen
dc.contributor.authorBracht, H.en
dc.contributor.authorGrimes, R. W.en
dc.contributor.authorJiang, C.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T12:16:41Z-
dc.date.available2014-04-13T12:16:41Z-
dc.date.issued2009-06-23en
dc.identifier.citationChroneos A, Jiang C, Grimes RW, Schwingenschlögl U, Bracht H (2009) Defect interactions in Sn[sub 1-x]Ge[sub x] random alloys. Appl Phys Lett 94: 252104. doi:10.1063/1.3159468.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3159468en
dc.identifier.urihttp://hdl.handle.net/10754/315739en
dc.description.abstractSn1−xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1−xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/94/25/10.1063/1.3159468en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleDefect interactions in Sn1−xGex random alloysen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionMaterials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, United Statesen
dc.contributor.institutionInstitute of Material Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSchwingenschlögl, Udoen
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