Electronegativity and doping in semiconductors

Handle URI:
http://hdl.handle.net/10754/315736
Title:
Electronegativity and doping in semiconductors
Authors:
Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima
Abstract:
Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Schwingenschlögl U, Chroneos A, Schuster C, Grimes RW (2012) Electronegativity and doping in semiconductors. Journal of Applied Physics 112: 046101. doi:10.1063/1.4747932.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
23-Aug-2012
DOI:
10.1063/1.4747932
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/112/4/10.1063/1.4747932
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorChroneos, Alexanderen
dc.contributor.authorGrimes, R. W.en
dc.contributor.authorSchuster, Cosimaen
dc.date.accessioned2014-04-13T12:01:47Z-
dc.date.available2014-04-13T12:01:47Z-
dc.date.issued2012-08-23en
dc.identifier.citationSchwingenschlögl U, Chroneos A, Schuster C, Grimes RW (2012) Electronegativity and doping in semiconductors. Journal of Applied Physics 112: 046101. doi:10.1063/1.4747932.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4747932en
dc.identifier.urihttp://hdl.handle.net/10754/315736en
dc.description.abstractCharge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/112/4/10.1063/1.4747932en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.subjectDopingen
dc.subjectElemental semiconductorsen
dc.subjectDiamonden
dc.subjectSiliconen
dc.subjectElectron doped superconductorsen
dc.subjectCarbonen
dc.subjectGermaniumen
dc.subjectIII-V semiconductorsen
dc.subjectSemiconductorsen
dc.subjectSemiconductor materialsen
dc.titleElectronegativity and doping in semiconductorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionInstitut für Physik, Universität Augsburg, 86135 Augsburg, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSchwingenschlögl, Udoen
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