Topological Phase Transition in Layered GaS and GaSe

Handle URI:
http://hdl.handle.net/10754/315735
Title:
Topological Phase Transition in Layered GaS and GaSe
Authors:
Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
By fully relativistic first principles calculations, we predict that appropriate strain engineering of layered GaX (X=S, Se) leads to a new class of three-dimensional topological insulators with an excitation gap of up to 135 meV. Our results provide a new perspective on the formation of three-dimensional topological insulators. Band inversion can be induced by strain only, without considering any spin-orbit coupling. The latter, however, is indispensable for the formation of local band gaps at the crossing points of the inverted bands. Our study indicates that three-dimensional topological insulators can also be realized in materials which comprise light elements only.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Zhu Z, Cheng Y, Schwingenschlögl U (2012) Topological Phase Transition in Layered GaS and GaSe. Physical Review Letters 108. doi:10.1103/PhysRevLett.108.266805.
Publisher:
American Physical Society (APS)
Journal:
Physical Review Letters
Issue Date:
29-Jun-2012
DOI:
10.1103/PhysRevLett.108.266805
Type:
Article
ISSN:
0031-9007; 1079-7114
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevLett.108.266805
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhu, Zhiyongen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T12:00:44Z-
dc.date.available2014-04-13T12:00:44Z-
dc.date.issued2012-06-29en
dc.identifier.citationZhu Z, Cheng Y, Schwingenschlögl U (2012) Topological Phase Transition in Layered GaS and GaSe. Physical Review Letters 108. doi:10.1103/PhysRevLett.108.266805.en
dc.identifier.issn0031-9007en
dc.identifier.issn1079-7114en
dc.identifier.doi10.1103/PhysRevLett.108.266805en
dc.identifier.urihttp://hdl.handle.net/10754/315735en
dc.description.abstractBy fully relativistic first principles calculations, we predict that appropriate strain engineering of layered GaX (X=S, Se) leads to a new class of three-dimensional topological insulators with an excitation gap of up to 135 meV. Our results provide a new perspective on the formation of three-dimensional topological insulators. Band inversion can be induced by strain only, without considering any spin-orbit coupling. The latter, however, is indispensable for the formation of local band gaps at the crossing points of the inverted bands. Our study indicates that three-dimensional topological insulators can also be realized in materials which comprise light elements only.en
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevLett.108.266805en
dc.rightsArchived with thanks to Physical Review Lettersen
dc.titleTopological Phase Transition in Layered GaS and GaSeen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalPhysical Review Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japanen
dc.contributor.institutionInstitut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhu, Zhiyongen
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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