Magnetocapacitance of an electrically tunable silicene device

Handle URI:
http://hdl.handle.net/10754/315729
Title:
Magnetocapacitance of an electrically tunable silicene device
Authors:
Tahir, M.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Despite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Tahir M, Schwingenschlögl U (2012) Magnetocapacitance of an electrically tunable silicene device. Appl Phys Lett 101: 132412. doi:10.1063/1.4754711.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
26-Sep-2012
DOI:
10.1063/1.4754711
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/101/13/10.1063/1.4754711
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorTahir, M.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-04-13T09:33:17Z-
dc.date.available2014-04-13T09:33:17Z-
dc.date.issued2012-09-26en
dc.identifier.citationTahir M, Schwingenschlögl U (2012) Magnetocapacitance of an electrically tunable silicene device. Appl Phys Lett 101: 132412. doi:10.1063/1.4754711.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4754711en
dc.identifier.urihttp://hdl.handle.net/10754/315729en
dc.description.abstractDespite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/101/13/10.1063/1.4754711en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleMagnetocapacitance of an electrically tunable silicene deviceen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionInstitut für Physik, Universität Augsburg, 86135 Augsburg, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorTahir, Muhammaden
kaust.authorSchwingenschlögl, Udoen
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