Extrinsic doping in silicon revisited

Handle URI:
http://hdl.handle.net/10754/315727
Title:
Extrinsic doping in silicon revisited
Authors:
Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima
Abstract:
Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Schwingenschlögl U, Chroneos A, Schuster C, Grimes RW (2010) Extrinsic doping in silicon revisited. Appl Phys Lett 96: 242107. doi:10.1063/1.3455313.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
17-Jun-2010
DOI:
10.1063/1.3455313
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/96/24/10.1063/1.3455313
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorChroneos, Alexanderen
dc.contributor.authorGrimes, R. W.en
dc.contributor.authorSchuster, Cosimaen
dc.date.accessioned2014-04-13T07:56:57Z-
dc.date.available2014-04-13T07:56:57Z-
dc.date.issued2010-06-17en
dc.identifier.citationSchwingenschlögl U, Chroneos A, Schuster C, Grimes RW (2010) Extrinsic doping in silicon revisited. Appl Phys Lett 96: 242107. doi:10.1063/1.3455313.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3455313en
dc.identifier.urihttp://hdl.handle.net/10754/315727en
dc.description.abstractBoth n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/96/24/10.1063/1.3455313en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleExtrinsic doping in silicon revisiteden
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, United Kingdomen
dc.contributor.institutionInstitut für Physik, Universität Augsburg, 86135 Augsburg, Germanyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSchwingenschlögl, Udoen
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