The metallic interface between the two band insulators LaGaO3 and SrTiO3

Handle URI:
http://hdl.handle.net/10754/315685
Title:
The metallic interface between the two band insulators LaGaO3 and SrTiO3
Authors:
Nazir, Safdar; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Singh, Nirpendra ( 0000-0001-8043-0403 )
Abstract:
The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Nazir S, Singh N, Schwingenschlögl U (2011) The metallic interface between the two band insulators LaGaO3 and SrTiO3. Appl Phys Lett 98: 262104. doi:10.1063/1.3604020.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
28-Jun-2011
DOI:
10.1063/1.3604020
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/98/26/10.1063/1.3604020
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorNazir, Safdaren
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorSingh, Nirpendraen
dc.date.accessioned2014-04-13T07:39:28Z-
dc.date.available2014-04-13T07:39:28Z-
dc.date.issued2011-06-28en
dc.identifier.citationNazir S, Singh N, Schwingenschlögl U (2011) The metallic interface between the two band insulators LaGaO3 and SrTiO3. Appl Phys Lett 98: 262104. doi:10.1063/1.3604020.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3604020en
dc.identifier.urihttp://hdl.handle.net/10754/315685en
dc.description.abstractThe formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/98/26/10.1063/1.3604020en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleThe metallic interface between the two band insulators LaGaO3 and SrTiO3en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and Astronomy, Clemson University, SC 29634, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNazir, Safdaren
kaust.authorSingh, Nirpendraen
kaust.authorSchwingenschlögl, Udoen
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