High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

Handle URI:
http://hdl.handle.net/10754/314531
Title:
High mobility of the strongly confined hole gas in AgTaO3/SrTiO3
Authors:
Nazir, Safdar; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Upadhyay Kahaly, M.
Abstract:
A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Nazir S, Upadhyay Kahaly M, Schwingenschlögl U (2012) High mobility of the strongly confined hole gas in AgTaO3/SrTiO3. Appl Phys Lett 100: 201607. doi:10.1063/1.4719106.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
18-May-2012
DOI:
10.1063/1.4719106
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/100/20/10.1063/1.4719106
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorNazir, Safdaren
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorUpadhyay Kahaly, M.en
dc.date.accessioned2014-03-23T08:30:20Z-
dc.date.available2014-03-23T08:30:20Z-
dc.date.issued2012-05-18en
dc.identifier.citationNazir S, Upadhyay Kahaly M, Schwingenschlögl U (2012) High mobility of the strongly confined hole gas in AgTaO3/SrTiO3. Appl Phys Lett 100: 201607. doi:10.1063/1.4719106.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4719106en
dc.identifier.urihttp://hdl.handle.net/10754/314531en
dc.description.abstractA theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/20/10.1063/1.4719106en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHigh mobility of the strongly confined hole gas in AgTaO3/SrTiO3en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNazir, Safdaren
kaust.authorKahaly, M. Upadhyayen
kaust.authorSchwingenschlögl, Udoen
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