Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

Handle URI:
http://hdl.handle.net/10754/314527
Title:
Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface
Authors:
Upadhyay Kahaly, M.; Nazir, Safdar; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We study the epitaxial GaAs-AlAs interface of wide gap materials by full-potential density functional theory. AlAsthin films on a GaAs substrate and GaAsthin films on an AlAs substrate show different trends for the electronic band gap with increasing film thickness. In both cases, we find an insulating state at the interface and a negligible charge transfer even after relaxation. Differences in the valence and conduction band edges suggest that the energy band discontinuities depend on the growth sequence. Introduction of As vacancies near the interface induces metallicity, which opens great potential for GaAs-AlAs heterostructures in modern electronics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Upadhyay Kahaly M, Nazir S, Schwingenschlögl U (2011) Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface. Appl Phys Lett 99: 123501. doi:10.1063/1.3643049.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
20-Sep-2011
DOI:
10.1063/1.3643049
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/99/12/10.1063/1.3643049
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorUpadhyay Kahaly, M.en
dc.contributor.authorNazir, Safdaren
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-03-23T08:14:36Z-
dc.date.available2014-03-23T08:14:36Z-
dc.date.issued2011-09-20en
dc.identifier.citationUpadhyay Kahaly M, Nazir S, Schwingenschlögl U (2011) Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface. Appl Phys Lett 99: 123501. doi:10.1063/1.3643049.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3643049en
dc.identifier.urihttp://hdl.handle.net/10754/314527en
dc.description.abstractWe study the epitaxial GaAs-AlAs interface of wide gap materials by full-potential density functional theory. AlAsthin films on a GaAs substrate and GaAsthin films on an AlAs substrate show different trends for the electronic band gap with increasing film thickness. In both cases, we find an insulating state at the interface and a negligible charge transfer even after relaxation. Differences in the valence and conduction band edges suggest that the energy band discontinuities depend on the growth sequence. Introduction of As vacancies near the interface induces metallicity, which opens great potential for GaAs-AlAs heterostructures in modern electronics.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/12/10.1063/1.3643049en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleBand structure engineering and vacancy induced metallicity at the GaAs-AlAs interfaceen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionMaterials Engineering, Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.institutionDepartment of Materials, Imperial College, London SW7 2AZ, United Kingdomen
dc.contributor.institutionUniversity of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84, Greeceen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKahaly, M. Upadhyayen
kaust.authorNazir, Safdaren
kaust.authorSchwingenschlögl, Udoen
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