Enhancement of p-type mobility in tin monoxide by native defects

Handle URI:
http://hdl.handle.net/10754/314511
Title:
Enhancement of p-type mobility in tin monoxide by native defects
Authors:
Granato, D. B.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Caraveo-Frescas, Jesus Alfonso; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS); Functional Nanomaterials and Devices Research Group; Materials Science and Engineering Program
Citation:
Granato DB, Caraveo-Frescas JA, Alshareef HN, Schwingenschlögl U (2013) Enhancement of p-type mobility in tin monoxide by native defects. Appl Phys Lett 102: 212105. doi:10.1063/1.4808382.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
31-May-2013
DOI:
10.1063/1.4808382
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/102/21/10.1063/1.4808382
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials & Devices; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorGranato, D. B.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-03-23T08:52:49Z-
dc.date.available2014-03-23T08:52:49Z-
dc.date.issued2013-05-31en
dc.identifier.citationGranato DB, Caraveo-Frescas JA, Alshareef HN, Schwingenschlögl U (2013) Enhancement of p-type mobility in tin monoxide by native defects. Appl Phys Lett 102: 212105. doi:10.1063/1.4808382.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4808382en
dc.identifier.urihttp://hdl.handle.net/10754/314511en
dc.description.abstractTransparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/102/21/10.1063/1.4808382en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleEnhancement of p-type mobility in tin monoxide by native defectsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorAlshareef, Husam N.en
kaust.authorSchwingenschlögl, Udoen
kaust.authorBianchi Granato, Daniloen
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