High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

Handle URI:
http://hdl.handle.net/10754/314506
Title:
High charge carrier density at the NaTaO3/SrTiO3 hetero-interface
Authors:
Nazir, Safdar; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)
Citation:
Nazir S, Schwingenschlögl U (2011) High charge carrier density at the NaTaO3/SrTiO3 hetero-interface. Appl Phys Lett 99: 073102. doi:10.1063/1.3625951.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
5-Aug-2011
DOI:
10.1063/1.3625951
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/99/7/10.1063/1.3625951
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorNazir, Safdaren
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-03-23T07:36:45Z-
dc.date.available2014-03-23T07:36:45Z-
dc.date.issued2011-08-05en
dc.identifier.citationNazir S, Schwingenschlögl U (2011) High charge carrier density at the NaTaO3/SrTiO3 hetero-interface. Appl Phys Lett 99: 073102. doi:10.1063/1.3625951.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3625951en
dc.identifier.urihttp://hdl.handle.net/10754/314506en
dc.description.abstractThe formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/7/10.1063/1.3625951en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHigh charge carrier density at the NaTaO3/SrTiO3 hetero-interfaceen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLehigh University, Department of Physics, Bethlehem, PA 18015, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNazir, Safdaren
kaust.authorSchwingenschlögl, Udoen
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