Intrinsic Dynamics of Quantum-Dash Lasers

Handle URI:
http://hdl.handle.net/10754/312990
Title:
Intrinsic Dynamics of Quantum-Dash Lasers
Authors:
Chen, Cheng; Djie, Hery Susanto; Hwang, James C. M.; Koch, Thomas L.; Lester, Luke F.; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Wang, Yang
Abstract:
Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Chen C, Wang Y, Djie HS, Ooi BS, Lester LF, et al. (2011) Intrinsic Dynamics of Quantum-Dash Lasers. IEEE J Select Topics Quantum Electron 17: 1167-1174. doi:10.1109/JSTQE.2010.2103373.
Publisher:
IEEE
Journal:
IEEE Journal of Selected Topics in Quantum Electronics
Issue Date:
Oct-2011
DOI:
10.1109/JSTQE.2010.2103373
Type:
Article
ISSN:
1077-260X; 1558-4542
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5713805
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Chengen
dc.contributor.authorDjie, Hery Susantoen
dc.contributor.authorHwang, James C. M.en
dc.contributor.authorKoch, Thomas L.en
dc.contributor.authorLester, Luke F.en
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorWang, Yangen
dc.date.accessioned2014-02-17T05:01:43Z-
dc.date.available2014-02-17T05:01:43Z-
dc.date.issued2011-10en
dc.identifier.citationChen C, Wang Y, Djie HS, Ooi BS, Lester LF, et al. (2011) Intrinsic Dynamics of Quantum-Dash Lasers. IEEE J Select Topics Quantum Electron 17: 1167-1174. doi:10.1109/JSTQE.2010.2103373.en
dc.identifier.issn1077-260Xen
dc.identifier.issn1558-4542en
dc.identifier.doi10.1109/JSTQE.2010.2103373en
dc.identifier.urihttp://hdl.handle.net/10754/312990en
dc.description.abstractTemperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5713805en
dc.rightsArchived with thanks to IEEE Journal of Selected Topics in Quantum Electronicsen
dc.titleIntrinsic Dynamics of Quantum-Dash Lasersen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Journal of Selected Topics in Quantum Electronicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionRF Micro Devices, Inc., Greensboro, NC 27409, United Statesen
dc.contributor.institutionOptiComp Corp., Zephyr Cove, NV 89448, United Statesen
dc.contributor.institutionJDS Uniphase Corp., San Jose, CA 95134, United Statesen
dc.contributor.institutionCenter for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, United Statesen
dc.contributor.institutionElectrical and Computer Engineering Department, Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionCompound Semiconductor Technology Laboratory, Lehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
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