Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

Handle URI:
http://hdl.handle.net/10754/312987
Title:
Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors
Authors:
Ivanov, Ts; Borissov, K.; David, J P R; Donchev, V.; Germanova, K.; Hongpinyo, V.; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Tellaleva, Ts; Vines, P.
Abstract:
A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Ivanov T, Donchev V, Germanova K, Tellaleva T, Borissov K, et al. (2012) Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors. Journal of Physics: Conference Series 356: 012032. doi:10.1088/1742-6596/356/1/012032.
Publisher:
IOP
Journal:
Journal of Physics: Conference Series
Conference/Event name:
17th International Summer School on Vacuum, Electron, and Ion Technologies, VEIT 2011
Issue Date:
29-Mar-2012
DOI:
10.1088/1742-6596/356/1/012032
Type:
Conference Paper
ISSN:
1742-6596
Additional Links:
http://stacks.iop.org/1742-6596/356/i=1/a=012032?key=crossref.f11580ed0ec717defc3635dd1033b09d
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorIvanov, Tsen
dc.contributor.authorBorissov, K.en
dc.contributor.authorDavid, J P Ren
dc.contributor.authorDonchev, V.en
dc.contributor.authorGermanova, K.en
dc.contributor.authorHongpinyo, V.en
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorTellaleva, Tsen
dc.contributor.authorVines, P.en
dc.date.accessioned2014-02-17T04:55:10Zen
dc.date.available2014-02-17T04:55:10Zen
dc.date.issued2012-3-29en
dc.identifier.citationIvanov T, Donchev V, Germanova K, Tellaleva T, Borissov K, et al. (2012) Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors. Journal of Physics: Conference Series 356: 012032. doi:10.1088/1742-6596/356/1/012032.en
dc.identifier.issn1742-6596en
dc.identifier.doi10.1088/1742-6596/356/1/012032en
dc.identifier.urihttp://hdl.handle.net/10754/312987en
dc.description.abstractA detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.en
dc.language.isoenen
dc.publisherIOPen
dc.relation.urlhttp://stacks.iop.org/1742-6596/356/i=1/a=012032?key=crossref.f11580ed0ec717defc3635dd1033b09den
dc.rightsArchived with thanks to Journal of Physics: Conference Seriesen
dc.titleInvestigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectorsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalJournal of Physics: Conference Seriesen
dc.conference.date2011-09-19 to 2011-09-23en
dc.conference.name17th International Summer School on Vacuum, Electron, and Ion Technologies, VEIT 2011en
dc.conference.locationSunny Beach, BGRen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionFaculty of Physics, St. Kliment Ohridski University of Sofia, 5, J. Bourchier Blvd., 1164 Sofia, Bulgariaen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionDepartment of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
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