InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

Handle URI:
http://hdl.handle.net/10754/312978
Title:
InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
Authors:
Guo, Wei; Banerjee, Animesh; Bhattacharya, Pallab K.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Guo W, Banerjee A, Bhattacharya P, Ooi BS (2011) InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon. Appl Phys Lett 98: 193102. doi:10.1063/1.3588201.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
2011
DOI:
10.1063/1.3588201
Type:
Article
ISSN:
00036951
Additional Links:
http://link.aip.org/link/APPLAB/v98/i19/p193102/s1&Agg=doi
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGuo, Weien
dc.contributor.authorBanerjee, Animeshen
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-02-17T05:02:47Z-
dc.date.available2014-02-17T05:02:47Z-
dc.date.issued2011en
dc.identifier.citationGuo W, Banerjee A, Bhattacharya P, Ooi BS (2011) InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon. Appl Phys Lett 98: 193102. doi:10.1063/1.3588201.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3588201en
dc.identifier.urihttp://hdl.handle.net/10754/312978en
dc.description.abstractHigh density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://link.aip.org/link/APPLAB/v98/i19/p193102/s1&Agg=doien
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleInGaN/GaN disk-in-nanowire white light emitting diodes on (001) siliconen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.institutionDivision of Physical Sciences and Engineering, King Abdullah University of Science and Engineering, Thuwal 23955-6900, Saudi Arabiaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
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