Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Handle URI:
http://hdl.handle.net/10754/312974
Title:
Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots
Authors:
Elafandy, Rami T. ( 0000-0002-8529-2967 ) ; Bhattacharya, Pallab K.; Cha, Dong Kyu; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Zhang, Meng
Abstract:
Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
ElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots. Journal of Applied Physics 112: 063506. doi:10.1063/1.4751434.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
2012
DOI:
10.1063/1.4751434
Type:
Article
ISSN:
00218979
Additional Links:
http://link.aip.org/link/JAPIAU/v112/i6/p063506/s1&Agg=doi
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorZhang, Mengen
dc.date.accessioned2014-02-17T04:54:15Z-
dc.date.available2014-02-17T04:54:15Z-
dc.date.issued2012en
dc.identifier.citationElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots. Journal of Applied Physics 112: 063506. doi:10.1063/1.4751434.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4751434en
dc.identifier.urihttp://hdl.handle.net/10754/312974en
dc.description.abstractDifferences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://link.aip.org/link/JAPIAU/v112/i6/p063506/s1&Agg=doien
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleReduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dotsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, MI 48109-2122, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNg, Tien Kheeen
kaust.authorCha, Dong Kyuen
kaust.authorOoi, Boon S.en
kaust.authorElafandy, Rami T.en
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