Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

Handle URI:
http://hdl.handle.net/10754/312973
Title:
Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method
Authors:
Najar, Adel; Anjum, Dalaver H.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Sougrat, Rachid
Abstract:
We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Najar A, Slimane AB, Hedhili MN, Anjum D, Sougrat R, et al. (2012) Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method. Journal of Applied Physics 112: 033502. doi:10.1063/1.4740051.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
2012
DOI:
10.1063/1.4740051
Type:
Article
ISSN:
00218979
Additional Links:
http://link.aip.org/link/JAPIAU/v112/i3/p033502/s1&Agg=doi
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNajar, Adelen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorSougrat, Rachiden
dc.date.accessioned2014-02-17T04:49:33Z-
dc.date.available2014-02-17T04:49:33Z-
dc.date.issued2012en
dc.identifier.citationNajar A, Slimane AB, Hedhili MN, Anjum D, Sougrat R, et al. (2012) Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method. Journal of Applied Physics 112: 033502. doi:10.1063/1.4740051.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4740051en
dc.identifier.urihttp://hdl.handle.net/10754/312973en
dc.description.abstractWe report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://link.aip.org/link/JAPIAU/v112/i3/p033502/s1&Agg=doien
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleEffect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching methoden
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301, Beal Avenue, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNajar, Adelen
kaust.authorBen Slimane, Ahmeden
kaust.authorHedhili, Mohamed N.en
kaust.authorAnjum, Dalaver H.en
kaust.authorSougrat, Rachiden
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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