High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

Handle URI:
http://hdl.handle.net/10754/312361
Title:
High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Majid, Mohammed Abdul ( 0000-0003-2224-8982 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Khan MZM, Majid MA, Ng TK, Ooi BS (2013) High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656386.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2013 IEEE Photonics Conference
Conference/Event name:
2013 26th IEEE Photonics Conference, IPC 2013
Issue Date:
2013
DOI:
10.1109/IPCon.2013.6656386
Type:
Conference Paper
Description:
Photonics Conference (IPC), 2013 IEEE
ISBN:
978-1-4577-1506-8
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656386
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorMajid, Mohammed Abdulen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-02-08T19:24:11Z-
dc.date.available2014-02-08T19:24:11Z-
dc.date.issued2013en
dc.identifier.citationKhan MZM, Majid MA, Ng TK, Ooi BS (2013) High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656386.en
dc.identifier.isbn978-1-4577-1506-8en
dc.identifier.doi10.1109/IPCon.2013.6656386en
dc.identifier.urihttp://hdl.handle.net/10754/312361en
dc.descriptionPhotonics Conference (IPC), 2013 IEEEen
dc.description.abstractThe demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656386en
dc.titleHigh performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active regionen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2013 IEEE Photonics Conferenceen
dc.conference.date8 September 2013 through 12 September 2013en
dc.conference.name2013 26th IEEE Photonics Conference, IPC 2013en
dc.conference.locationBellevue, WAen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.authorMajid, Mohammed Abdulen
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