Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

Handle URI:
http://hdl.handle.net/10754/312268
Title:
Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film
Authors:
San Roman Alerigi, Damian ( 0000-0002-3571-6776 ) ; Anjum, Dalaver H.; Zhang, Yaping; Yang, Xiaoming; Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alsunaidi, Mohammad; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
San-Roman-Alerigi DP, Anjum DH, Zhang Y, Yang X, Benslimane A, et al. (2013) Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film. Journal of Applied Physics 113: 044116. doi:10.1063/1.4789602.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
Jan-2013
DOI:
10.1063/1.4789602
Type:
Article
ISSN:
00218979
Additional Links:
http://link.aip.org/link/JAPIAU/v113/i4/p044116/s1&Agg=doi
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSan Roman Alerigi, Damianen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorZhang, Yapingen
dc.contributor.authorYang, Xiaomingen
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlsunaidi, Mohammaden
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-02-05T12:41:46Z-
dc.date.available2014-02-05T12:41:46Z-
dc.date.issued2013-01en
dc.identifier.citationSan-Roman-Alerigi DP, Anjum DH, Zhang Y, Yang X, Benslimane A, et al. (2013) Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film. Journal of Applied Physics 113: 044116. doi:10.1063/1.4789602.en
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4789602en
dc.identifier.urihttp://hdl.handle.net/10754/312268en
dc.description.abstractIn this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://link.aip.org/link/JAPIAU/v113/i4/p044116/s1&Agg=doien
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleElectron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin filmen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering, King Fahd University of Petroleum and Minerals (KFUPM), Dhahran 31261, Saudi Arabiaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSan Roman Alerigi, Damianen
kaust.authorAnjum, Dalaver H.en
kaust.authorYang, Xiaomingen
kaust.authorBen Slimane, Ahmeden
kaust.authorNg, Tien Kheeen
kaust.authorHedhili, Mohamed N.en
kaust.authorOoi, Boon S.en
kaust.authorZhang, Yapingen
kaust.authorAlsunaidi, Mohammaden
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