On the phenomenon of large photoluminescence red shift in GaN nanoparticles

Handle URI:
http://hdl.handle.net/10754/312264
Title:
On the phenomenon of large photoluminescence red shift in GaN nanoparticles
Authors:
Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Anjum, Dalaver H.; Elafandy, Rami T.; Najar, Adel; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; San-Román-Alerigi, Damián P.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications. © 2013 Slimane et al.; licensee Springer.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Slimane A, Najar A, Elafandy R, San-Román-Alerigi DP, Anjum D, et al. (2013) On the phenomenon of large photoluminescence red shift in GaN nanoparticles. Nanoscale Research Letters 8: 342. doi:10.1186/1556-276X-8-342.
Publisher:
Springer
Journal:
Nanoscale Research Letters
Issue Date:
Jul-2013
DOI:
10.1186/1556-276X-8-342
PubMed ID:
23902709
PubMed Central ID:
PMC3733736
Type:
Article
ISSN:
1556-276X
Additional Links:
http://www.nanoscalereslett.com/content/8/1/342
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorNajar, Adelen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorSan-Román-Alerigi, Damián P.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-02-05T12:25:17Z-
dc.date.available2014-02-05T12:25:17Z-
dc.date.issued2013-07en
dc.identifier.citationSlimane A, Najar A, Elafandy R, San-Román-Alerigi DP, Anjum D, et al. (2013) On the phenomenon of large photoluminescence red shift in GaN nanoparticles. Nanoscale Research Letters 8: 342. doi:10.1186/1556-276X-8-342.en
dc.identifier.issn1556-276Xen
dc.identifier.pmid23902709en
dc.identifier.doi10.1186/1556-276X-8-342en
dc.identifier.urihttp://hdl.handle.net/10754/312264en
dc.description.abstractWe report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications. © 2013 Slimane et al.; licensee Springer.en
dc.language.isoenen
dc.publisherSpringeren
dc.relation.urlhttp://www.nanoscalereslett.com/content/8/1/342en
dc.rightsArchived with thanks to Nanoscale Research Lettersen
dc.titleOn the phenomenon of large photoluminescence red shift in GaN nanoparticlesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalNanoscale Research Lettersen
dc.identifier.pmcidPMC3733736en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorBen Slimane, Ahmeden
kaust.authorNajar, Adelen
kaust.authorSan Roman Alerigi, Damianen
kaust.authorAnjum, Dalaver H.en
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.authorElafandy, Rami T.en

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