Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

Handle URI:
http://hdl.handle.net/10754/312262
Title:
Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
Authors:
Heo, Junseok; Bhattacharya, Pallab K.; Guo, Wei; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Zhou, Zifan
Abstract:
GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Heo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P (2013) Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy. Appl Phys Lett 103: 181102. doi:10.1063/1.4827338.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
Oct-2013
DOI:
10.1063/1.4827338
Type:
Article
ISSN:
00036951
Additional Links:
http://link.aip.org/link/APPLAB/v103/i18/p181102/s1&Agg=doi
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHeo, Junseoken
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorGuo, Weien
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorZhou, Zifanen
dc.date.accessioned2014-02-05T11:54:13Z-
dc.date.available2014-02-05T11:54:13Z-
dc.date.issued2013-10en
dc.identifier.citationHeo J, Zhou Z, Guo W, Ooi BS, Bhattacharya P (2013) Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy. Appl Phys Lett 103: 181102. doi:10.1063/1.4827338.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4827338en
dc.identifier.urihttp://hdl.handle.net/10754/312262en
dc.description.abstractGaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://link.aip.org/link/APPLAB/v103/i18/p181102/s1&Agg=doien
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleCharacteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxyen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Michigan-Dearborn, Dearborn, MI 48128, United Statesen
dc.contributor.institutionMicrosystems Engineering, Rochester Institute of Technology, Rochester, NY 14623, United Statesen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Ajou University, Suwon 443-749, South Koreaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
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