Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes

Handle URI:
http://hdl.handle.net/10754/312261
Title:
Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes
Authors:
Elafandy, Rami T.; Cha, Dong Kyu; Majid, Mohammed A.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Zhao, Lan
Abstract:
Despite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the development of high-efficiency, low-cost, GaN-based heterostructure devices. For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These nanomembranes can act as seeding layers for subsequent overgrowth of high-quality GaN. A model is proposed, based on scanning and transmission electron microscopy as well as optical measurements to explain the physical processes behind the formation of the GaN nanomembranes. These novel nanomembranes, once transferred to other substrates, present a unique and technologically attractive path towards integrating high-efficiency GaN optical components along with silicon electronics. Interestingly, due to their nanoscale thickness and macroscopic sizes, these nanomembranes may enable the production of flexible GaN-based optoelectronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
ElAfandy RT, Majid MA, Ng TK, Zhao L, Cha D, et al. (2014) Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes. Adv Funct Mater 24: 2305-2311. doi:10.1002/adfm.201303001.
Publisher:
Wiley-VCH Verlag
Journal:
Advanced Functional Materials
Issue Date:
Apr-2014
DOI:
10.1002/adfm.201303001; 10.1002/adfm.201470104
Type:
Article
ISSN:
1616301X
Additional Links:
http://doi.wiley.com/10.1002/adfm.201303001
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorMajid, Mohammed A.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorZhao, Lanen
dc.date.accessioned2014-02-05T11:52:11Z-
dc.date.available2014-02-05T11:52:11Z-
dc.date.issued2014-04en
dc.identifier.citationElAfandy RT, Majid MA, Ng TK, Zhao L, Cha D, et al. (2014) Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes. Adv Funct Mater 24: 2305-2311. doi:10.1002/adfm.201303001.en
dc.identifier.issn1616301Xen
dc.identifier.doi10.1002/adfm.201303001en
dc.identifier.doi10.1002/adfm.201470104en
dc.identifier.urihttp://hdl.handle.net/10754/312261en
dc.description.abstractDespite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the development of high-efficiency, low-cost, GaN-based heterostructure devices. For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These nanomembranes can act as seeding layers for subsequent overgrowth of high-quality GaN. A model is proposed, based on scanning and transmission electron microscopy as well as optical measurements to explain the physical processes behind the formation of the GaN nanomembranes. These novel nanomembranes, once transferred to other substrates, present a unique and technologically attractive path towards integrating high-efficiency GaN optical components along with silicon electronics. Interestingly, due to their nanoscale thickness and macroscopic sizes, these nanomembranes may enable the production of flexible GaN-based optoelectronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.language.isoenen
dc.publisherWiley-VCH Verlagen
dc.relation.urlhttp://doi.wiley.com/10.1002/adfm.201303001en
dc.rightsArchived with thanks to Advanced Functional Materialsen
dc.titleExfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalAdvanced Functional Materialsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNg, Tien Kheeen
kaust.authorCha, Dong Kyuen
kaust.authorOoi, Boon S.en
kaust.authorElafandy, Rami T.en
kaust.authorMajid., Mohammed Abdulen
kaust.authorZhao, L. J.en
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