High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 um Tunnel Injection Laser

Handle URI:
http://hdl.handle.net/10754/312220
Title:
High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 um Tunnel Injection Laser
Authors:
Bhowmick, Sishir; Baten, Md Zunaid; Bhattacharya, Pallab K.; Frost, Thomas; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The characteristics of 1.55 ? InAs self-organized quantum-dot lasers, grown on (001) InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the dots with holes and tunnel injection of electrons have been incorporated in the design of the active (gain) region of the laser heterostructure. Large values of To=227 K (5 °C ? T ?45 °C) and 100 K (45 °C ? T ? 75 °C) were derived from temperature dependent measurements of the light-current characteristics. The modal gain per dot layer is 14.5 cm -1 and the differential gain derived from both light-current and small-signal modulation measurements is 0.8} imes 10-15 cm}2. The maximum measured 3 rm dB small-signal modulation bandwidth is 14.4 GHz and the gain compression factor is 5.4 imes 10-17 cm}2. The lasers are characterized by a chirp of 0.6 AA for a modulation frequency of 10 GHz and a near zero ?-parameter at the peak of the laser emission. These characteristics are amongst the best from any 1.55 ? edge-emitting semiconductor laser. © 1965-2012 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Bhowmick S, Baten MZ, Frost T, Ooi BS, Bhattacharya P (2014) High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 μm Tunnel Injection Laser. IEEE Journal of Quantum Electronics 50: 7-14. doi:10.1109/JQE.2013.2290943.
Publisher:
IEEE
Journal:
IEEE Journal of Quantum Electronics
Issue Date:
Jan-2014
DOI:
10.1109/JQE.2013.2290943
Type:
Article
ISSN:
0018-9197; 1558-1713
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6665003
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBhowmick, Sishiren
dc.contributor.authorBaten, Md Zunaiden
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorFrost, Thomasen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-02-05T11:40:25Z-
dc.date.available2014-02-05T11:40:25Z-
dc.date.issued2014-01en
dc.identifier.citationBhowmick S, Baten MZ, Frost T, Ooi BS, Bhattacharya P (2014) High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 μm Tunnel Injection Laser. IEEE Journal of Quantum Electronics 50: 7-14. doi:10.1109/JQE.2013.2290943.en
dc.identifier.issn0018-9197en
dc.identifier.issn1558-1713en
dc.identifier.doi10.1109/JQE.2013.2290943en
dc.identifier.urihttp://hdl.handle.net/10754/312220en
dc.description.abstractThe characteristics of 1.55 ? InAs self-organized quantum-dot lasers, grown on (001) InP substrates by molecular beam epitaxy, have been investigated. Modulation doping of the dots with holes and tunnel injection of electrons have been incorporated in the design of the active (gain) region of the laser heterostructure. Large values of To=227 K (5 °C ? T ?45 °C) and 100 K (45 °C ? T ? 75 °C) were derived from temperature dependent measurements of the light-current characteristics. The modal gain per dot layer is 14.5 cm -1 and the differential gain derived from both light-current and small-signal modulation measurements is 0.8} imes 10-15 cm}2. The maximum measured 3 rm dB small-signal modulation bandwidth is 14.4 GHz and the gain compression factor is 5.4 imes 10-17 cm}2. The lasers are characterized by a chirp of 0.6 AA for a modulation frequency of 10 GHz and a near zero ?-parameter at the peak of the laser emission. These characteristics are amongst the best from any 1.55 ? edge-emitting semiconductor laser. © 1965-2012 IEEE.en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6665003en
dc.rightsArchived with thanks to IEEE Journal of Quantum Electronicsen
dc.subjectQuantum doten
dc.titleHigh Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 um Tunnel Injection Laseren
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Journal of Quantum Electronicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Nanoscale Photonics and Spintronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
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