Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

Handle URI:
http://hdl.handle.net/10754/312219
Title:
Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Bhattacharya, Pallab K.; Lee, Chi-Sen; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
In this paper, we assessed the effect of additionally broadened quantum dash (Qdash) optical transitions in the multi-stack dash-in-a-well laser structure at both, material and device level. A broad photoluminescence linewidth of ?150 nm demonstrates the formation of highly inhomogeneous InAs-dashes across the stacks. The transmission electron microscopy revealed small (large) average dash height from the Qdash stack with thick (thin) over grown barrier layer. The Fabry-Perot laser diodes fabricated from this chirped structure exhibits unique device physics under the short pulsewidth (SPW) and quasi-continuous wave (QCW) operation. Varying the ridge-width W from 2 to 4 ?rm showed quenching of ultrabroad lasing signature in the SPW operation, and consistent even for a wide 15 ?rm oxide strip laser diode. A lasing spectral split with reduced intensity gap in the center is observed in the QCW operation with the gap decreasing with increasing ridge-width. Such atypical lasing operation, influenced by the waveguiding mechanism is qualitatively realized by associating to the reduced vertical coupling effect of the Qdash stacks in the operation of small ridge-width lasers compared with large ridge-width and oxide stripe lasers, and leading to varying non-uniform distribution of carriers among the inhomogeneously broadened Qdash stacks in each case. Our chirped 2 × 830 ?rm ridge laser demonstrated marked improvement in the internal quantum efficiency (?80) and -3 dB lasing bandwidth, >50 nm centered at ?1.61 ?m. © 2013 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Khan MZM, Ng TK, Lee C-S, Bhattacharya P, Ooi BS (2014) Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters. IEEE Journal of Quantum Electronics 50: 51-61. doi:10.1109/JQE.2013.2294092.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Journal of Quantum Electronics
Issue Date:
Feb-2014
DOI:
10.1109/JQE.2013.2294092
Type:
Article
ISSN:
0018-9197; 1558-1713
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6678711
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorLee, Chi-Senen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2014-02-05T11:37:31Z-
dc.date.available2014-02-05T11:37:31Z-
dc.date.issued2014-02en
dc.identifier.citationKhan MZM, Ng TK, Lee C-S, Bhattacharya P, Ooi BS (2014) Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters. IEEE Journal of Quantum Electronics 50: 51-61. doi:10.1109/JQE.2013.2294092.en
dc.identifier.issn0018-9197en
dc.identifier.issn1558-1713en
dc.identifier.doi10.1109/JQE.2013.2294092en
dc.identifier.urihttp://hdl.handle.net/10754/312219en
dc.description.abstractIn this paper, we assessed the effect of additionally broadened quantum dash (Qdash) optical transitions in the multi-stack dash-in-a-well laser structure at both, material and device level. A broad photoluminescence linewidth of ?150 nm demonstrates the formation of highly inhomogeneous InAs-dashes across the stacks. The transmission electron microscopy revealed small (large) average dash height from the Qdash stack with thick (thin) over grown barrier layer. The Fabry-Perot laser diodes fabricated from this chirped structure exhibits unique device physics under the short pulsewidth (SPW) and quasi-continuous wave (QCW) operation. Varying the ridge-width W from 2 to 4 ?rm showed quenching of ultrabroad lasing signature in the SPW operation, and consistent even for a wide 15 ?rm oxide strip laser diode. A lasing spectral split with reduced intensity gap in the center is observed in the QCW operation with the gap decreasing with increasing ridge-width. Such atypical lasing operation, influenced by the waveguiding mechanism is qualitatively realized by associating to the reduced vertical coupling effect of the Qdash stacks in the operation of small ridge-width lasers compared with large ridge-width and oxide stripe lasers, and leading to varying non-uniform distribution of carriers among the inhomogeneously broadened Qdash stacks in each case. Our chirped 2 × 830 ?rm ridge laser demonstrated marked improvement in the internal quantum efficiency (?80) and -3 dB lasing bandwidth, >50 nm centered at ?1.61 ?m. © 2013 IEEE.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6678711en
dc.rightsArchived with thanks to IEEE Journal of Quantum Electronicsen
dc.titleInvestigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emittersen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Journal of Quantum Electronicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.