Engineering of refractive index in sulfide chalcogenide glass by direct laser writing

Handle URI:
http://hdl.handle.net/10754/310661
Title:
Engineering of refractive index in sulfide chalcogenide glass by direct laser writing
Authors:
Zhang, Yaping; Gao, Yangqin ( 0000-0002-2486-6621 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Chew, Basil; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Zhao, Donghui; Jain, Himanshu
Abstract:
Arsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Zhang Y, Gao Y, Ng TK, Ooi BS, Chew B, et al. (2010) Engineering of refractive index in sulfide chalcogenide glass by direct laser writing. 2010 Photonics Global Conference. doi:10.1109/PGC.2010.5705967.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2010 Photonics Global Conference
Conference/Event name:
2010 Photonics Global Conference, PGC 2010
Issue Date:
2010
DOI:
10.1109/PGC.2010.5705967
Type:
Conference Paper
ISBN:
978-1-4244-9882-6
Sponsors:
KAUST- Academic Excellence Alliance (AEA) 2010 Grant
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5705967
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Yapingen
dc.contributor.authorGao, Yangqinen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorChew, Basilen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorZhao, Donghuien
dc.contributor.authorJain, Himanshuen
dc.date.accessioned2013-12-29T12:13:09Z-
dc.date.available2013-12-29T12:13:09Z-
dc.date.issued2010en
dc.identifier.citationZhang Y, Gao Y, Ng TK, Ooi BS, Chew B, et al. (2010) Engineering of refractive index in sulfide chalcogenide glass by direct laser writing. 2010 Photonics Global Conference. doi:10.1109/PGC.2010.5705967.en
dc.identifier.isbn978-1-4244-9882-6en
dc.identifier.doi10.1109/PGC.2010.5705967en
dc.identifier.urihttp://hdl.handle.net/10754/310661en
dc.description.abstractArsenic trisulfide (As2S3) glass is an interesting material for photonic integrated circuits (PICs) as infrared (IR) or nonlinear optical components. In this paper, direct laser writing was applied to engineer the refractive index of As2S3 thin film. Film samples were exposed to focused above bandgap light with wavelength at 405 nm using different fluence adjusted by laser power and exposure time. The index of refraction before and after laser irradiation was calculated by fitting the experimental data obtained from Spectroscopic Ellipsometer (SE) measurement to Tauc-Lorenz dispersion formula. A positive change in refractive index (Δn = 0.19 at 1.55 μm) as well as an enhancement in anisotropy was achieved in As2S3 film by using 10 mW, 0.3 μs laser irradiation. With further increasing the fluence, refractive index increased while anisotropic property weakened. Due to the rapid and large photo-induced modification of refractive index obtainable with high spatial resolution, this process is promising for integrated optic device fabrication.en
dc.description.sponsorshipKAUST- Academic Excellence Alliance (AEA) 2010 Granten
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5705967en
dc.titleEngineering of refractive index in sulfide chalcogenide glass by direct laser writingen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2010 Photonics Global Conferenceen
dc.conference.date14 December 2010 through 16 December 2010en
dc.conference.name2010 Photonics Global Conference, PGC 2010en
dc.conference.locationOrcharden
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLehigh Universityen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.authorHedhili, Mohamed N.en
kaust.authorZhang, Yapingen
kaust.authorGao, Yangqinen
kaust.authorChew, Basilen
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