Thermal Annealing induced relaxation of compressive strain in porous GaN structures

Handle URI:
http://hdl.handle.net/10754/310654
Title:
Thermal Annealing induced relaxation of compressive strain in porous GaN structures
Authors:
Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Najar, Adel; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Slimane AB, Najar A, Ng TK, Ooi BS (2012) Thermal Annealing induced relaxation of compressive strain in porous GaN structures. IEEE Photonics Conference 2012. doi:10.1109/IPCon.2012.6359296.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Photonics Conference 2012
Conference/Event name:
25th IEEE Photonics Conference, IPC 2012
Issue Date:
2012
DOI:
10.1109/IPCon.2012.6359296
Type:
Conference Paper
ISBN:
978-1-4577-0731-5
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6359296
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorNajar, Adelen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2013-12-28T18:25:34Z-
dc.date.available2013-12-28T18:25:34Z-
dc.date.issued2012en
dc.identifier.citationSlimane AB, Najar A, Ng TK, Ooi BS (2012) Thermal Annealing induced relaxation of compressive strain in porous GaN structures. IEEE Photonics Conference 2012. doi:10.1109/IPCon.2012.6359296.en
dc.identifier.isbn978-1-4577-0731-5en
dc.identifier.doi10.1109/IPCon.2012.6359296en
dc.identifier.urihttp://hdl.handle.net/10754/310654en
dc.description.abstractThe effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6359296en
dc.titleThermal Annealing induced relaxation of compressive strain in porous GaN structuresen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalIEEE Photonics Conference 2012en
dc.conference.date23 September 2012 through 27 September 2012en
dc.conference.name25th IEEE Photonics Conference, IPC 2012en
dc.conference.locationBurlingame, CAen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorBen Slimane, Ahmeden
kaust.authorNajar, Adelen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.