Handle URI:
http://hdl.handle.net/10754/310652
Title:
GaN Nanowires Synthesized by Electroless Etching Method
Authors:
Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Ben Slimane, Ahmed ( 0000-0002-5515-1151 )
Abstract:
Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Najar A, Slimane AB, Anjum DH, Ng TK, Ooi BS (2012) GaN Nanowires Synthesized by Electroless Etching Method. Conference on Lasers and Electro-Optics 2012. doi:10.1364/CLEO_AT.2012.JTh2A.101.
Publisher:
The Optical Society
Journal:
Conference on Lasers and Electro-Optics 2012
Conference/Event name:
CLEO: Applications and Technology 2012
Issue Date:
2012
DOI:
10.1364/CLEO_AT.2012.JTh2A.101
Type:
Conference Paper
ISBN:
978-1-55752-943-5
Additional Links:
http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2012-JTh2A.101
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNajar, Adelen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorBen Slimane, Ahmeden
dc.date.accessioned2013-12-28T17:16:37Z-
dc.date.available2013-12-28T17:16:37Z-
dc.date.issued2012en
dc.identifier.citationNajar A, Slimane AB, Anjum DH, Ng TK, Ooi BS (2012) GaN Nanowires Synthesized by Electroless Etching Method. Conference on Lasers and Electro-Optics 2012. doi:10.1364/CLEO_AT.2012.JTh2A.101.en
dc.identifier.isbn978-1-55752-943-5en
dc.identifier.doi10.1364/CLEO_AT.2012.JTh2A.101en
dc.identifier.urihttp://hdl.handle.net/10754/310652en
dc.description.abstractUltra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.en
dc.language.isoenen
dc.publisherThe Optical Societyen
dc.relation.urlhttp://www.opticsinfobase.org/abstract.cfm?URI=CLEO_AT-2012-JTh2A.101en
dc.titleGaN Nanowires Synthesized by Electroless Etching Methoden
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalConference on Lasers and Electro-Optics 2012en
dc.conference.date6–11 May 2012en
dc.conference.nameCLEO: Applications and Technology 2012en
dc.conference.locationSan Jose, California United Statesen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorNajar, Adelen
kaust.authorBen Slimane, Ahmeden
kaust.authorAnjum, Dalaver H.en
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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