Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

Handle URI:
http://hdl.handle.net/10754/310651
Title:
Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures
Authors:
Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Najar, Adel; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Shen, Chao; Anjum, Dalaver H.; San-Román-Alerigi, Damián P.; Ng, Tien Khee ( 0000-0002-1480-6975 )
Abstract:
We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
A. Ben Slimane, A. Najar, T. K. Ng, D. San-Roman-Alerigi, D. Anjum, C. Shen, and B. S. Ooi, "Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper ATh3B.3, Beijing, China, November 12-15, 2013.
Publisher:
Optical Society of America
Journal:
OSA Technical Digest (online)
Issue Date:
2013
DOI:
10.1364/ACPC.2013.ATh3B.3
Type:
Conference Paper
ISBN:
978-1- 55752-989-3
Additional Links:
https://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-ATh3B.3
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorNajar, Adelen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorShen, Chaoen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorSan-Román-Alerigi, Damián P.en
dc.contributor.authorNg, Tien Kheeen
dc.date.accessioned2013-12-28T15:42:47Zen
dc.date.available2013-12-28T15:42:47Zen
dc.date.issued2013en
dc.identifier.citationA. Ben Slimane, A. Najar, T. K. Ng, D. San-Roman-Alerigi, D. Anjum, C. Shen, and B. S. Ooi, "Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper ATh3B.3, Beijing, China, November 12-15, 2013.en
dc.identifier.isbn978-1- 55752-989-3en
dc.identifier.doi10.1364/ACPC.2013.ATh3B.3en
dc.identifier.urihttp://hdl.handle.net/10754/310651en
dc.description.abstractWe report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.en
dc.language.isoenen
dc.publisherOptical Society of Americaen
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-ATh3B.3en
dc.titleSurface States Effect on the Large Photoluminescence Redshift in GaN Nanostructuresen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalOSA Technical Digest (online)en
dc.eprint.versionPublisher's Version/PDFen
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