Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Handle URI:
http://hdl.handle.net/10754/310650
Title:
Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs
Authors:
Shen, Chao; Kang, Chun Hong; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
C. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.
Publisher:
Optical Society of America
Journal:
OSA Technical Digest (online)
Issue Date:
2013
DOI:
10.1364/ACPC.2013.AW3K.3
Type:
Conference Paper
ISBN:
978-1- 55752-989-3
Additional Links:
https://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorKang, Chun Hongen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2013-12-28T15:41:57Zen
dc.date.available2013-12-28T15:41:57Zen
dc.date.issued2013en
dc.identifier.citationC. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.en
dc.identifier.isbn978-1- 55752-989-3en
dc.identifier.doi10.1364/ACPC.2013.AW3K.3en
dc.identifier.urihttp://hdl.handle.net/10754/310650en
dc.description.abstractThe mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.en
dc.language.isoenen
dc.publisherOptical Society of Americaen
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3en
dc.titleMesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalOSA Technical Digest (online)en
dc.eprint.versionPublisher's Version/PDFen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.