Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Handle URI:
http://hdl.handle.net/10754/310648
Title:
Effective antireflection properties of porous silicon nanowires for photovoltaic applications
Authors:
Najar, Adel; Al-Jabr, Ahmad ( 0000-0002-3836-2184 ) ; Alsunaidi, Mohammad; Anjum, Dalaver H.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Ben Slimane, Ahmed ( 0000-0002-5515-1151 ) ; Sougrat, Rachid
Abstract:
Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 µm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Najar A, Al-Jabr AA, Slimane AB, Alsunaidi MA, Ng TK, et al. (2013) Effective antireflection properties of porous silicon nanowires for photovoltaic applications. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550769.
Publisher:
IEEE
Journal:
2013 Saudi International Electronics, Communications and Photonics Conference
Conference/Event name:
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
Issue Date:
2013
DOI:
10.1109/SIECPC.2013.6550769
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6550769
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNajar, Adelen
dc.contributor.authorAl-Jabr, Ahmaden
dc.contributor.authorAlsunaidi, Mohammaden
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorBen Slimane, Ahmeden
dc.contributor.authorSougrat, Rachiden
dc.date.accessioned2013-12-28T14:12:28Z-
dc.date.available2013-12-28T14:12:28Z-
dc.date.issued2013en
dc.identifier.citationNajar A, Al-Jabr AA, Slimane AB, Alsunaidi MA, Ng TK, et al. (2013) Effective antireflection properties of porous silicon nanowires for photovoltaic applications. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550769.en
dc.identifier.doi10.1109/SIECPC.2013.6550769en
dc.identifier.urihttp://hdl.handle.net/10754/310648en
dc.description.abstractPorous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 µm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6550769en
dc.titleEffective antireflection properties of porous silicon nanowires for photovoltaic applicationsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2013 Saudi International Electronics, Communications and Photonics Conferenceen
dc.conference.date27 April 2013 through 30 April 2013en
dc.conference.name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013en
dc.conference.locationRiyadhen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKing Fahd University of Petroleum and Minerals (KFUPM)en
kaust.authorNajar, Adelen
kaust.authorAl-Jabr, Ahmaden
kaust.authorBen Slimane, Ahmeden
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.authorAlsunaidi, Mohammaden
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