Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs

Handle URI:
http://hdl.handle.net/10754/310643
Title:
Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs
Authors:
Shen, Chao; Cha, Dong Kyu; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Micro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multi-quantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the E2 phonon peak split from the Raman scattering signatures at 572 cm-1 and 568 cm-1, respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D < 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays. © 2013 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Shen C, Ng TK, Ooi BS, Cha D (2013) Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550773.
Publisher:
IEEE
Conference/Event name:
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
Issue Date:
2013
DOI:
10.1109/SIECPC.2013.6550773
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6550773
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2013-12-27T00:59:04Z-
dc.date.available2013-12-27T00:59:04Z-
dc.date.issued2013en
dc.identifier.citationShen C, Ng TK, Ooi BS, Cha D (2013) Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/SIECPC.2013.6550773.en
dc.identifier.doi10.1109/SIECPC.2013.6550773en
dc.identifier.urihttp://hdl.handle.net/10754/310643en
dc.description.abstractMicro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multi-quantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the E2 phonon peak split from the Raman scattering signatures at 572 cm-1 and 568 cm-1, respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D < 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays. © 2013 IEEE.en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6550773en
dc.subjectInGaN/GaN quantum wellen
dc.subjectStrain reliefen
dc.subjectMicro-pillaren
dc.titleStrain relief InGaN/GaN MQW micro-pillars for high brightness LEDsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.conference.date27 April 2013 through 30 April 2013en
dc.conference.name2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013en
dc.conference.locationRiyadhen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.authorCha, Dong Kyuen
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