InGaN micro-LED-pillar as the building block for high brightness emitters

Handle URI:
http://hdl.handle.net/10754/310642
Title:
InGaN micro-LED-pillar as the building block for high brightness emitters
Authors:
Shen, Chao; Cha, Dong Kyu; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Yang, Yang
Abstract:
In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Shen C, Ng TK, Yang Y, Cha D, Ooi BS (2013) InGaN micro-LED-pillar as the building block for high brightness emitters. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656491.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2013 IEEE Photonics Conference
Conference/Event name:
2013 26th IEEE Photonics Conference, IPC 2013
Issue Date:
2013
DOI:
10.1109/IPCon.2013.6656491
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656491
Appears in Collections:
Conference Papers; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorYang, Yangen
dc.date.accessioned2013-12-27T00:34:22Z-
dc.date.available2013-12-27T00:34:22Z-
dc.date.issued2013en
dc.identifier.citationShen C, Ng TK, Yang Y, Cha D, Ooi BS (2013) InGaN micro-LED-pillar as the building block for high brightness emitters. 2013 IEEE Photonics Conference. doi:10.1109/IPCon.2013.6656491.en
dc.identifier.doi10.1109/IPCon.2013.6656491en
dc.identifier.urihttp://hdl.handle.net/10754/310642en
dc.description.abstractIn summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656491en
dc.titleInGaN micro-LED-pillar as the building block for high brightness emittersen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2013 IEEE Photonics Conferenceen
dc.conference.date8 September 2013 through 12 September 2013en
dc.conference.name2013 26th IEEE Photonics Conference, IPC 2013en
dc.conference.locationBellevue, WAen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorYang, Yangen
kaust.authorCha, Dong Kyuen
kaust.authorOoi, Boon S.en
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