Effect of the number of stacking layers on the characteristics of quantum-dash lasers

Handle URI:
http://hdl.handle.net/10754/306841
Title:
Effect of the number of stacking layers on the characteristics of quantum-dash lasers
Authors:
Khan, Mohammed Zahed Mustafa ( 0000-0002-9734-5413 ) ; Bhattacharya, Pallab K.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region. © 2011 Optical Society of America.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Khan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS (2011) Effect of the number of stacking layers on the characteristics of quantum-dash lasers. Optics Express 19: 13378. doi:10.1364/OE.19.013378.
Journal:
Optics Express
Issue Date:
2011
DOI:
10.1364/OE.19.013378
Type:
Article
Additional Links:
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-14-13378
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Mohammed Zahed Mustafaen
dc.contributor.authorBhattacharya, Pallab K.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2013-12-15T13:53:36Z-
dc.date.available2013-12-15T13:53:36Z-
dc.date.issued2011en
dc.identifier.citationKhan MZM, Ng TK, Schwingenschlogl U, Bhattacharya P, Ooi BS (2011) Effect of the number of stacking layers on the characteristics of quantum-dash lasers. Optics Express 19: 13378. doi:10.1364/OE.19.013378.en
dc.identifier.doi10.1364/OE.19.013378en
dc.identifier.urihttp://hdl.handle.net/10754/306841en
dc.description.abstractA theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region. © 2011 Optical Society of America.en
dc.language.isoenen
dc.relation.urlhttp://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-14-13378en
dc.titleEffect of the number of stacking layers on the characteristics of quantum-dash lasersen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalOptics Expressen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301, Beal Avenue, Ann Arbor, MI 48109-2122, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKhan, Mohammed Zahed Mustafaen
kaust.authorNg, Tien Kheeen
kaust.authorSchwingenschlögl, Udoen
kaust.authorOoi, Boon S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.