Handle URI:
http://hdl.handle.net/10754/306086
Title:
Polymer Ferroelectric Memory for Flexible Electronics
Authors:
Khan, Mohd Adnan
Abstract:
With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] and highly insulating dielectric poly(p-phenylene oxide) [PPO] with drastically improved fatigue and thermal stability; novel all-polymer ferroelectric diodes based on blends of ferroelectric [P(VDF-TrFE)] and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester [PCBM] with resistive switching properties and the first hybrid p-type ferroelectric memory with transparent tin monoxide [SnO] on plastic substrates with record mobilities.
Advisors:
Alshareef, Husam N.
Committee Member:
Amassian, Aram ( 0000-0002-5734-1194 ) ; Beaujuge, Pierre M.; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Program:
Materials Science and Engineering
Issue Date:
Nov-2013
Type:
Dissertation
Appears in Collections:
Dissertations; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.advisorAlshareef, Husam N.en
dc.contributor.authorKhan, Mohd Adnanen
dc.date.accessioned2013-12-02T13:04:34Z-
dc.date.available2013-12-02T13:04:34Z-
dc.date.issued2013-11en
dc.identifier.urihttp://hdl.handle.net/10754/306086en
dc.description.abstractWith the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] and highly insulating dielectric poly(p-phenylene oxide) [PPO] with drastically improved fatigue and thermal stability; novel all-polymer ferroelectric diodes based on blends of ferroelectric [P(VDF-TrFE)] and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester [PCBM] with resistive switching properties and the first hybrid p-type ferroelectric memory with transparent tin monoxide [SnO] on plastic substrates with record mobilities.en
dc.language.isoenen
dc.subjectPolymeren
dc.subjectFerroelectricen
dc.subjectMemoryen
dc.subjectFlexibleen
dc.subjectElectronicsen
dc.titlePolymer Ferroelectric Memory for Flexible Electronicsen
dc.typeDissertationen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberAmassian, Aramen
dc.contributor.committeememberBeaujuge, Pierre M.en
dc.contributor.committeememberOoi, Boon S.en
dc.contributor.committeememberSchwingenschlögl, Udoen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.nameDoctor of Philosophyen
dc.person.id101803en
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