Handle URI:
http://hdl.handle.net/10754/306065
Title:
Transparent Oxide Semiconductors for Emerging Electronics
Authors:
Caraveo-Frescas, Jesus Alfonso
Abstract:
Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then demonstrated by the fabrication of hybrid ferroelectric field effect transistors composed of organic ferroelectric layer polyvinylidene fluoride trifluoroethylene and inorganic p-type semiconductor tin monoxide. Both rigid and flexible devices are demonstrated, showing the advantages of low temperature oxides over polymer semiconductors by achieving much better performance, such as order of magnitude higher hole mobility.
Advisors:
Alshareef, Husam N.
Committee Member:
Aljawhari, Hala; Al-Kassab, Talaat; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Program:
Materials Science and Engineering
Issue Date:
Nov-2013
Type:
Dissertation
Appears in Collections:
Dissertations; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.advisorAlshareef, Husam N.en
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.date.accessioned2013-12-02T13:13:47Z-
dc.date.available2013-12-02T13:13:47Z-
dc.date.issued2013-11en
dc.identifier.urihttp://hdl.handle.net/10754/306065en
dc.description.abstractTransparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then demonstrated by the fabrication of hybrid ferroelectric field effect transistors composed of organic ferroelectric layer polyvinylidene fluoride trifluoroethylene and inorganic p-type semiconductor tin monoxide. Both rigid and flexible devices are demonstrated, showing the advantages of low temperature oxides over polymer semiconductors by achieving much better performance, such as order of magnitude higher hole mobility.en
dc.language.isoenen
dc.subjectP-type Oxidesen
dc.subjectP-type Oxides Semiconductorsen
dc.subjectTin monoxideen
dc.subjectTransparent Electronics.en
dc.subjectThin Film Transistorsen
dc.subjectTransparenten
dc.titleTransparent Oxide Semiconductors for Emerging Electronicsen
dc.typeDissertationen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen_GB
dc.contributor.committeememberAljawhari, Halaen
dc.contributor.committeememberAl-Kassab, Talaaten
dc.contributor.committeememberOoi, Boon S.en
dc.contributor.committeememberSchwingenschlögl, Udoen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.nameDoctor of Philosophyen
dc.person.id101791en
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