Wavy channel transistor for area efficient high performance operation

Handle URI:
http://hdl.handle.net/10754/293686
Title:
Wavy channel transistor for area efficient high performance operation
Authors:
Fahad, Hossain M.; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 )
Abstract:
We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Integrated Nanotechnology Lab
Citation:
Fahad HM, Hussain AM, Torres Sevilla G, Hussain MM (2013) Wavy channel transistor for area efficient high performance operation. Appl Phys Lett 102: 134109. doi:10.1063/1.4800234.
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
5-Apr-2013
DOI:
10.1063/1.4800234
Type:
Article
ISSN:
00036951
Additional Links:
http://link.aip.org/link/APPLAB/v102/i13/p134109/s1&Agg=doi
Appears in Collections:
Articles; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorSevilla, Galo T.en
dc.date.accessioned2013-06-09T14:05:10Z-
dc.date.available2013-06-09T14:05:10Z-
dc.date.issued2013-04-05en
dc.identifier.citationFahad HM, Hussain AM, Torres Sevilla G, Hussain MM (2013) Wavy channel transistor for area efficient high performance operation. Appl Phys Lett 102: 134109. doi:10.1063/1.4800234.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4800234en
dc.identifier.urihttp://hdl.handle.net/10754/293686en
dc.description.abstractWe report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://link.aip.org/link/APPLAB/v102/i13/p134109/s1&Agg=doien
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.subjectMOSFETen
dc.titleWavy channel transistor for area efficient high performance operationen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Engineering Mathematics, Faculty of Engineering Cairo University Egypten
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Aftab M.en
kaust.authorSevilla, Galo T.en
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.