Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Handle URI:
http://hdl.handle.net/10754/293685
Title:
Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric
Authors:
Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 )
Abstract:
In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Integrated Nanotechnology Lab
Citation:
Rojas JP, Torres Sevilla G, Hussain MM (2013) Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric. Appl Phys Lett 102: 064102. doi:10.1063/1.4791693.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
12-Feb-2013
DOI:
10.1063/1.4791693
Type:
Article
ISSN:
00036951
Additional Links:
http://link.aip.org/link/APPLAB/v102/i6/p064102/s1&Agg=doi
Appears in Collections:
Articles; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorSevilla, Galo T.en
dc.date.accessioned2013-06-09T14:02:11Z-
dc.date.available2013-06-09T14:02:11Z-
dc.date.issued2013-02-12en
dc.identifier.citationRojas JP, Torres Sevilla G, Hussain MM (2013) Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric. Appl Phys Lett 102: 064102. doi:10.1063/1.4791693.en
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4791693en
dc.identifier.urihttp://hdl.handle.net/10754/293685en
dc.description.abstractIn pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urlhttp://link.aip.org/link/APPLAB/v102/i6/p064102/s1&Agg=doien
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.subjectelemental semiconductorsen
dc.subjectetchingen
dc.subjectMOS capacitorsen
dc.subjectsiliconen
dc.subjecttransparencyen
dc.titleStructural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabricen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionGeorgia Institute of Technology, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorSevilla, Galo T.en
kaust.authorHussain, Muhammad Mustafaen
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