Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?

Handle URI:
http://hdl.handle.net/10754/293661
Title:
Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?
Authors:
Fahad, Hossain M.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Integrated Nanotechnology Lab
Citation:
Fahad HM, Hussain MM (2012) Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors- Sci Rep 2. doi:10.1038/srep00475.
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
27-Jun-2012
DOI:
10.1038/srep00475
PubMed ID:
22741059
PubMed Central ID:
PMC3384075
Type:
Article
ISSN:
2045-2322
Additional Links:
http://www.nature.com/doifinder/10.1038/srep00475
Appears in Collections:
Articles; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2013-06-09T13:52:23Z-
dc.date.available2013-06-09T13:52:23Z-
dc.date.issued2012-06-27en
dc.identifier.citationFahad HM, Hussain MM (2012) Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors- Sci Rep 2. doi:10.1038/srep00475.en
dc.identifier.issn2045-2322en
dc.identifier.pmid22741059en
dc.identifier.doi10.1038/srep00475en
dc.identifier.urihttp://hdl.handle.net/10754/293661en
dc.description.abstractDecade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep00475en
dc.rightsArchived with thanks to Scientific Reportsen
dc.titleAre Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?en
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalScientific Reportsen
dc.identifier.pmcidPMC3384075en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionGeorgia Institute of Technology, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Muhammad Mustafaen

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