Achieving nanoscale horizontal separations in the standard 2 μm PolyMUMPS process

Handle URI:
http://hdl.handle.net/10754/266992
Title:
Achieving nanoscale horizontal separations in the standard 2 μm PolyMUMPS process
Authors:
Elshurafa, Amro M.; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
This paper shares with the research community how to achieve, effectively and easily, lateral submicron separations in the standard 2 lm PolyMUMPS process without any fabrication intervention or post-processing, based on the oxide sidewall spacer technique. Thousands of nanoseparations were created and successfully tested by visual inspection and by a simple capacitance measurement. The lateral separations attained were less than 440 nm and reached as low as 280 nm. To corroborate the findings, measurements were performed on different capacitors fabricated in different fabrication runs with consistent results. This is the first time that submicron lateral distances are reported in PolyMUMPS using the oxide spacer technique.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Elshurafa AM, Salama KN (2013) Achieving nanoscale horizontal separations in the standard 2 -m PolyMUMPS process. Appl Nanosci 4: 241-246. doi:10.1007/s13204-013-0195-z.
Publisher:
springer
Journal:
Applied Nanoscience
Issue Date:
25-Jan-2013
DOI:
10.1007/s13204-013-0195-z
Type:
Article
ISSN:
2190-5509; 2190-5517
Additional Links:
http://www.springerlink.com/index/10.1007/s13204-013-0195-z
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorElshurafa, Amro M.en
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2013-01-25T15:31:53Z-
dc.date.available2013-01-25T15:31:53Z-
dc.date.issued2013-01-25en
dc.identifier.citationElshurafa AM, Salama KN (2013) Achieving nanoscale horizontal separations in the standard 2 -m PolyMUMPS process. Appl Nanosci 4: 241-246. doi:10.1007/s13204-013-0195-z.en
dc.identifier.issn2190-5509en
dc.identifier.issn2190-5517en
dc.identifier.doi10.1007/s13204-013-0195-zen
dc.identifier.urihttp://hdl.handle.net/10754/266992en
dc.description.abstractThis paper shares with the research community how to achieve, effectively and easily, lateral submicron separations in the standard 2 lm PolyMUMPS process without any fabrication intervention or post-processing, based on the oxide sidewall spacer technique. Thousands of nanoseparations were created and successfully tested by visual inspection and by a simple capacitance measurement. The lateral separations attained were less than 440 nm and reached as low as 280 nm. To corroborate the findings, measurements were performed on different capacitors fabricated in different fabrication runs with consistent results. This is the first time that submicron lateral distances are reported in PolyMUMPS using the oxide spacer technique.en
dc.language.isoenen
dc.publisherspringeren
dc.relation.urlhttp://www.springerlink.com/index/10.1007/s13204-013-0195-zen
dc.rightsArchived with thanks to Applied Nanoscienceen
dc.subjectMEMSen
dc.subjectSacrificial oxide spaceren
dc.subjectPOLYMUMPSen
dc.subjectcapacitoren
dc.titleAchieving nanoscale horizontal separations in the standard 2 μm PolyMUMPS processen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalApplied Nanoscienceen
dc.eprint.versionPost-printen
dc.contributor.institutionElectronics and Communication Department, Faculty of Engineering, Cairo University, Cairo, Egypten
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorElshurafa, Amro M.en
kaust.authorSalama, Khaled N.en
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